Fundamental Research Into Radiation Effects in Cryogenic Electronics Technologies

The overall goal of this fundamental research project was to expand the state-of-the-art understanding of radiation interactions in relevant cryogenic CMOS technologies at and below 180 nm feature sizes. This goal was accomplished through the innovative design of test chips for radiation characterization in a commercially available CMOS technology relevant to the focal plane array (FPA) and read-out-integrated circuit (ROIC) cryogenic electronics communities, and the development of a modeling strategy analysis of radiation effects degradation mechanisms, and for prediction of the natural space radiation effects response. Results have been presented to the radiation effects community in the form of journal and conference submissions, through technical interchange meetings, and through the release of technology characterization vehicle (TCV) and circuit test vehicle (CTV) design files. Full manuscripts are included as appendices.