Growth and Characterization InGaN/GaN Nanoscale Heterostructures

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Abstract:

The intensity of InGaN related photoluminescence increased more than an order of magnitude for structures with intermediate InGaN layer. The growth of the InGaNGaN SL structures was realized by periodically alteration of the growth temperate in the range between 730 C and 860 C. Leasing under conditions of optical pumping was obtained both in directions peipendicular and parallel to sample surface.

Author(s):
Lundin, W. V. ; Sakharov, A. V. ; Semenov, V. A. ; Usikov, A. S. ; Baidakova, M. V.
Author Organization(s):
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Descriptive Note:
Conference proceedings
Supplementary Note:
Pres: 7th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 14-18 Jun 1999. p485-488. This article is from ADA407055 Nanostructures: Physics and Technology. 7th International Symposium. St. Petersburg, Russia, June 14-18, 1999 Proceedings
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: Hard Copy Only.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
NT.04
Monitor Series:
X5
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*SUPERLATTICES, *NANOTECHNOLOGY, PHOTOLUMINESCENCE, RUSSIA, CRYSTAL GROWTH, OPTICAL PUMPING, GALLIUM NITRIDES
Field(s)/Group(s):
Solid State Physics
Keyword(s):
COMPONENT REPORT, FOREIGN REPORTS, INDIUM GALLIUM NITRIDES
Report Date:
1999 Jun 18
Creation Date:
2002 Nov 20