Photoluminescence Study of InP Nanoscale Islands Grown by MOVPE in InGaAs/GaAs Matrix

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Abstract:

Photoluminescence study PL of the self-assembling Stranski Krastanov growth of InP nanoscale islands embedded in In0.49Ga0.51P matrix by low pressure metal organic vapor phase epitaxy are presented. The temperature and the excitation level dependencies of the external quantum efficiency of these structures were invesflgated. InP nanoislands demonstrate a high quantum efficiency at 77 K and high PL wavelength temperature stability.

Author(s):
Vinokurov, D. A. ; Kapitonov, V. A. ; Sokolova, Z. N. ; Tarasov, I. S.
Author Organization(s):
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Descriptive Note:
Conference proceedings
Supplementary Note:
Pres: 7th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia, 14-18 Jun 1999. p67-69. This article is from ADA407055 Nanostructures: Physics and Technology. 7th International Symposium. St. Petersburg, Russia, June 14-18, 1999 Proceedings
Pagination:
0003

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: Hard Copy Only.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
QWR/QD.18P
Monitor Series:
X5
 Subject Terms
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*PHOTOLUMINESCENCE, *QUANTUM DOTS, EXCITATION, THERMAL STABILITY, QUANTUM EFFICIENCY, RUSSIA, INDIUM PHOSPHIDES, NANOSTRUCTURES
Field(s)/Group(s):
Solid State Physics
Keyword(s):
COMPONENT REPORT, FOREIGN REPORTS, VAPOR PHASE EPITAXY, STRANSKI KRASTANOV GROWTH
Report Date:
1999 Jun 18
Creation Date:
2002 Nov 20