Metal-Organic Vapor Phase Epitaxial Reactor for the Deposition of Infrared Detector Materials

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Abstract:

A fully automated metalorganic vapor phase epitaxial MOVPE system to grow various II-VI semiconductor thin films was acquired and installed at Rensselaer Polytechnic Institute RPI during the year 2013. The design and construction of the system was completed in 2012 and the final installation and testing has been carried out during 2013. A set of growth experiments to deposit CdTe and ZnTe thin films on GaAs and Si substrates was carried out to test the system operation. For these test experiments, dimethyl cadmium, diisopropyl tellurium and diethylzinc were used as the Cd, Te and Zn precursors. The system was shown to operate as designed and the plan was to use the system for various thin film deposition. The installed system significantly enhanced the capability of RPI in the area of MOVPE of II-VI materials.

Author(s):
Bhat, Ishwara
Author Organization(s):
RENSSELAER POLYTECHNIC INST TROY NY DEPT OF ELECTRICAL COMPUTER AND SYSTEMS ENGINEERING
Descriptive Note:
Final rept. 15 Jun 2010-14 Mar 2013
Supplementary Note:
The original document contains color images.
Pagination:
0020

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ARO-57760-EL-RIP.1
Contract/Grant Number(s):
W911NF-10-1-0191
Monitor Series:
57760-EL-RIP.1, ARO
 Subject Terms
Joint Capability Areas:
JCA_1.2_Force Preparation; JCA_1_Force Support; JCA_4.6_Engineering; JCA_6_Net Centric; JCA_1.2.3_Educating; JCA_1.2.7_Experimentation; JCA_5_Command and Control; JCA_6.4.1_Secure Information Exchange; JCA_1.2.1_Training; JCA_8_Building Partnerships
Communities of Interest:
Advanced Electronics
Descriptor(s):
*EPITAXIAL GROWTH, *INFRARED DETECTORS, CADMIUM TELLURIDES, CHEMICAL VAPOR DEPOSITION, EXPERIMENTAL DESIGN, GROUP II VI COMPOUNDS, METHYL RADICALS, ORGANOMETALLIC COMPOUNDS, SEMICONDUCTORS, SINGLE CRYSTALS, SOLAR CELLS, SUBSTRATES, SURFACE CHEMISTRY, SYSTEMS ENGINEERING, THIN FILMS, ZINC TELLURIDES
Field(s)/Group(s):
Physical Chemistry, Electrical and Electronic Equipment, Infrared Detection and Detectors, Solid State Physics
Keyword(s):
EPITAXIAL REACTOR, MOCVD(METAL ORGANIC VAPOR PHASE EPITAXIAL), INFRARED MATERIALS, PE611103A
Report Date:
2015 Apr 09
Creation Date:
2015 Dec 07