High Electron Mobility Transistors (HEMT). Selected Papers

Publication comprised of three papers 1 Polarization field mapping of Al0.85In0.15NAlNGaN heterostructure by Lin Zhou et al. Published in Applied Physics Letter 94, 121909 2009 2 Figures of merit in high-frequency and high-power GaN HEMTs by F. A. Marino et al. Published in Journal of Physics Conference Series 193 2009 012040 and 3 Advanced electron Microscopy Characterization of GaN-based high electron mobility transistors by D. A. Cullen et al. Presented at the International Conference on Advanced Materials 11th, ICAM 2009, 20-25 September 2009, Rio de Janeiro, Brazil. This document contains color.