Characterization of Zinc Selenide-Based Ultraviolet Detectors

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Abstract:

Wide bandgap semiconductors such as Zinc Selenide ZnSe have become popular for ultraviolet UV photodetectors. ZnSe has a higher photosensitivity compared to silicon-based detectors due to its larger bandgap. Its capability of turning optical power into valuable electrical signals makes it suitable for measurement and recording of UV exposure for military personnel. The prospect of ZnSes unique medical and military applications has been the driving force of this study. This thesis presents characterization of performance of UV detectors using ZnSe-based Schottky diodes. There are a total of 15 photodetectors involved in this study. Three sets, each consisting of five photodetectors, were designed to detect Ultraviolet-A 320-400 nm, Ultraviolet-B 290-320 nm and combination of both UV-A and UV-B wavelength ranges. The 15 detectors were analyzed for their photosensitivity using a photocurrent measurement system. Each diodes responsivity ampere per watt was determined as a function of wavelength of the incident radiation. The second part of the characterization process includes the determination of the current-voltage IV characteristics of the photodetectors. Each photodiodes current response was plotted as a function of both reverse and forward biased voltages and compared with the expected behavior.

Author(s):
Naval, Jr, Victoriano C.
Author Organization(s):
NAVAL POSTGRADUATE SCHOOL MONTEREY CA
Descriptive Note:
Master's thesis
Supplementary Note:
The original document contains color images.
Pagination:
0056

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Monitor Series:
NPS
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*BAND GAPS, *ZINC SELENIDES, *PHOTOELECTRICITY, *ULTRAVIOLET DETECTORS, ENERGY GAPS, SEMICONDUCTORS, MEDICINE, BROADBAND, MILITARY APPLICATIONS, RECORDING SYSTEMS, ELECTRIC CURRENT, PHOTODETECTORS, BIAS, PHOTODIODES, FORCE(MECHANICS), PHOTOSENSITIVITY, THESES, ULTRAVIOLET RADIATION, FORWARD AREAS, OPTICAL PROPERTIES, MILITARY PERSONNEL
Field(s)/Group(s):
Inorganic Chemistry, Ultraviolet Detection and Detectors, Electricity and Magnetism
Keyword(s):
*ULTRAVIOLET LIGHT, *CURRENT VOLTAGE, ZINC SELENIDE, SCHOTTKY, RESPONSIVITY, DEPLETION REGION, MELANOMA, DARK CURRENT, FORWARD BIASED, REVERSE BIASED
Report Date:
2009 Dec 01
Creation Date:
2010 Mar 03