Wafer Cleaning and Pre-Bonding Module for Wafer Bonding

reportActive / Technical Report | Accession Number: ADA502259 | Open PDF

Abstract:

The EVG 810 system was delivered to UCSB and installed in the new Engineering Sciences cleanroom. The machine was inspected and checked out to insure that it met the designed specifications for bond strength. A number of silicon wafers were bonded with and without activation. As designed, the silicon wafers bonded with an energy of approximately 1.5 Jm2 when activated versus 0.4 Jm2 without activation. The bulk fracture strength of silicon is approximately 2.5 Jm2.

Author(s):
Mishra, Umesh ; Witt, Gerald L.
Author Organization(s):
CALIFORNIA UNIV REGENTS SANTA BARBARA
Descriptive Note:
Final performance rept. 1 Jun 2005-31 Aug 2006
Supplementary Note:
Purchase request no. FQ8671-0501249; BPN F1ATA05126B249; Proposal no. 05-NE-135 DOI: 10.21236/ADA502259
Pagination:
0014

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFRL-SR-AR-TR-09-0206
Contract/Grant Number(s):
FA9550-05-1-0391
Task Number(s):
BX
Project Number(s):
2305
Monitor Series:
TR-09-0206, AFOSR/VA
 Subject Terms
Joint Capability Areas:
JCA_1.2.7_Experimentation; JCA_4.6_Engineering
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*CLEANING, *WAFERS, *BONDING, *SILICON, GALLIUM NITRIDES, STRENGTH(MECHANICS), SEMICONDUCTORS, PLASMAS(PHYSICS), ACTIVATION, FRACTURE(MECHANICS)
Field(s)/Group(s):
Electrical and Electronic Equipment, Manufacturing and Industrial Engineering and Control of Production Systems, Mechanics
Keyword(s):
EVG 810 SYSTEM, SEMICONDUCTOR WAFER BONDING, PE61102F, WUAFRL2305BX
Report Date:
2007 Dec 10
Creation Date:
2009 Aug 05