Electrical and Thermal Analysis of Gallium Nitride HEMTs

reportActive / Technical Report | Accession Number: ADA501542 | Open PDF

Abstract:

The purpose of this thesis was to build a transient model and to study the electrical and thermal characteristics of the AlGaNGaN HEMT. We first used Method 3104 of MIL-STD 750D to determine the location of HEMT structure that gate voltage measurement relates to. Secondly, we investigated the performance of single pulse and multiple pulses. Thirdly, we studied and compared the performance between the DC model and the Transient model multiple pulses with the same power. Finally, we compared the self-heating effect between various substrates and discussed the observation of unique transistor heating. Based on the analysis of these simulation results, we would be able to predict the performance of the AlGaNGaN HEMT.

Author(s):
Wang, Yuchia
Author Organization(s):
NAVAL POSTGRADUATE SCHOOL MONTEREY CA
Descriptive Note:
Master's thesis
Pagination:
0109

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Monitor Series:
NPS
 Subject Terms
Joint Capability Areas:
JCA_6.1.3_Switching and Routing; JCA_6_Net Centric; JCA_6.1_Information Transport; JCA_3_Force Application; JCA_5_Command and Control; JCA_3.2_Engagement; JCA_8_Building Partnerships; JCA_5.3_Planning; JCA_1_Force Support; JCA_1.3_Human Capital Management; JCA_3.2.1_Kinetic Means; JCA_1.2.5_Lessons Learned; JCA_1.3.2_Personnel Management; JCA_8.1_Communicate; JCA_8.2_Shape
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*HIGH ELECTRON MOBILITY TRANSISTORS, *GALLIUM NITRIDES, THESES, VOLTAGE, THERMAL ANALYSIS, PULSES, TRANSIENTS, SIMULATION, ELECTRICAL PROPERTIES
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
2009 Jun 01
Creation Date:
2009 Jul 22