Performance and RF Reliability of GaN-ON-SiC HEMTs Using Dual-Gate Architectures

reportActive / Technical Report | Accession Number: ADA466887 | Open PDF

Abstract:

AlGaNGaN HEMTs on SiC have been fabricated with dual and single gate device geometries. Sub-threshold characteristics and drain bias dependence of large signal parameters were compared to identify differences in electric field. Degradation under RF stress reveals the relative impact of temperature and electric field. The results illustrate the beneficial effects of the dual gate geometry for performance and reliability.

Author(s):
Vetury, R. ; Shealy, J. B. ; Green, D. S. ; Mckenna, J. ; Brown, J. D. ; Leverich, K. ; Garber, P. M. ; Poulton, M. J.
Author Organization(s):
RFMD INFRASTRUCTURE PRODUCT GROUP INC CHARLOTTE NC
Descriptive Note:
Conference paper (preprint)
Supplementary Note:
Submitted for presentation at the International Microelectronics Symposium.
Pagination:
0006

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFRL-ML-WP-TP-2007-419
Contract/Grant Number(s):
FA8650-05-C-5411
Task Number(s):
71
Project Number(s):
4348
Monitor Series:
TP-2007-419, AFRL-ML-WP
 Subject Terms
Joint Capability Areas:
JCA_3.2_Engagement; JCA_3_Force Application; JCA_6_Net Centric; JCA_6.1.2_Wireless Transmission; JCA_6.1_Information Transport; JCA_8_Building Partnerships
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*GATES(CIRCUITS), *RELIABILITY, *SILICON CARBIDES, *GALLIUM NITRIDES, *HIGH ELECTRON MOBILITY TRANSISTORS, SYMPOSIA, DEGRADATION, RADIOFREQUENCY, ARCHITECTURE, ELECTRIC FIELDS, THRESHOLD EFFECTS
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
*DUAL GATE ARCHITECTURE, CASCODE, PREPRINTS, PE62102F, WUAFRL434871, 71100300
Report Date:
2006 Jul 01
Creation Date:
2007 Jun 20