Pulsed Capacitance Measurement of Silicon Carbide (SiC) Schottky Diode and SiC Metal Oxide Semiconductor

reportActive / Technical Report | Accession Number: ADA458317 | Open PDF

Abstract:

The incremental capacitance C was measured for a silicon carbide SiC Schottky diode during a reverse-biasing pulse and for two SiC n-MOS transistors during a negative pulse to their source with the drain grounded. C was measured as a function of pulsed voltage to 600 V, and on a gain-phase analyzer as a function of frequency and bias voltage to 40 V.

Author(s):
Griffin, Timothy E.
Author Organization(s):
ARMY RESEARCH LAB ADELPHI MD
Supplementary Note:
The original document contains color images. DOI: 10.21236/ADA458317
Pagination:
0028

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ARL-TR-3993
Monitor Series:
ARL/ADELPHI
 Subject Terms
Joint Capability Areas:
JCA_6_Net Centric; JCA_6.1.1_Wired Transmission; JCA_6.1_Information Transport; JCA_8_Building Partnerships
Modernization Areas:
Microelectronics
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*DIODES, *SCHOTTKY BARRIER DEVICES, *CAPACITANCE, *SILICON CARBIDES, MEASUREMENT, METAL OXIDE SEMICONDUCTORS, PULSES, GAIN
Field(s)/Group(s):
Electrical and Electronic Equipment, Electricity and Magnetism
Report Date:
2006 Nov 01
Creation Date:
2006 Dec 20