Utilizing ISE-TCAD Software to Simulate Power MOSFET Devices Operating at Cryogenic Temperatures

reportActive / Technical Report | Accession Number: ADA391115 | Open PDF

Abstract:

There has been research in the past on electronics operation at cryogenic temperatures. However here we present research by the use of simulation tools for the study power MOSFETs operating at cryogenic temperatures. By the use of integrated Systems Engineering Technical computer Aided Design software ISE-TCAD. POWER MOSFETs were modeled and simulated under room temperature 300 K and also Liquid Nitrogen Temperature 77 K. Power MOSFETs make an almost ideal candidate for operating at cryogenic conditions because of their high switching speeds, large breakdown voltage, and increase performance in on resistance. It is shown that. for this device, on resistance and transconductance increase by three times as does epitaxial layer mobility. However breakdown voltage and threshold voltage deteriorates slightly. First a computer-generated model is developed and a variety of parameter extractions are performed. Then, particular regions of the power MOSFET are modified and reevaluated for a comparison of parameter analysis. Lastly, an attempt to fabricate the device was performed at the University of Central Florida.

Author(s):
Chow, Louis C. ; Mauriello, Robert J.
Author Organization(s):
UNIVERSITY OF CENTRAL FLORIDA ORLANDO DEPT OF MECHANICAL MATERIALS AND AEROSPACE ENGINEERING
Descriptive Note:
Final rept. 1 Aug 1999-14 Dec 2000
Supplementary Note:
--Original contains color plates: All DTIC reproductions will be in black and white.
Pagination:
0060

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFRL-SR-BL-TR-01-0337
Contract/Grant Number(s):
F49620-97-1-0475
Task Number(s):
TS
Project Number(s):
3484
Monitor Series:
TR-01-0337, AFOSR/VA
 Subject Terms
Joint Capability Areas:
JCA_3.1.2_Maneuver to Insert; JCA_3.1_Maneuver; JCA_3_Force Application; JCA_1_Force Support; JCA_1.3_Human Capital Management; JCA_1.3.2_Personnel Management; JCA_5_Command and Control; JCA_5.3_Planning; JCA_6.1.3_Switching and Routing; JCA_1.2_Force Preparation; JCA_6.1_Information Transport; JCA_6_Net Centric; JCA_JCA_4.1.2_Sustain the Force; JCA_4.1_Deployment and Distribution; JCA_1.2.3_Educating
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*COMPUTERIZED SIMULATION, *MOSFET SEMICONDUCTORS, PARAMETRIC ANALYSIS, COMPUTER AIDED DESIGN, SEMICONDUCTOR DEVICES, ELECTRICAL PROPERTIES, CRYOGENICS, ELECTRICAL ENGINEERING, SOFTWARE TOOLS
Field(s)/Group(s):
Electrical and Electronic Equipment, Solid State Physics, Computer Programming and Software
Keyword(s):
PE61103D
Report Date:
2001 Apr 13
Creation Date:
2001 Jul 05