Radiation Effects in HEMTs

reportActive / Technical Report | Accession Number: ADA259642 | Open PDF

Abstract:

Various structure HEMTs have been irradiated with He ions MeV alpha particle, fast neutrons and Co6O gamma rays. The radiation doze was varied up to 10exp 13asq cm, 10exp 16nsq cm and 10exp 7 rads Si. The investigation has been extended on GaAs Layers and AlGaAsGaAs heterojunctions in order to determine the defects that are induced by radiation in GaAs and AlGaAs. The degradation sources of HEMTs and their dependence on the device layer structure have been determined. A charge control model was, also, employed in order to separate the contribution of donor and buffer layers on the 2DEG degradation. Finally the investigation included a comparative study of MESFET radiation degradation.

Author(s):
Papaioannou, G. J.
Author Organization(s):
ATHENS UNIV (GREECE) DEPT OF PHYSICS
Descriptive Note:
Final rept. 1 Jan 1990-31 Dec 1991
Pagination:
0110

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
AFOSR-90-0086
Monitor Series:
EOARD
 Subject Terms
Joint Capability Areas:
JCA_1.2.5_Lessons Learned; JCA_1.2.7_Experimentation; JCA_5_Command and Control; JCA_4.4.1_Food Service; JCA_4.4_Logistics Services; JCA_5.3_Planning; JCA_4.5.4_Requirements Definition; JCA_4.5_Operational Contract Support
Communities of Interest:
Advanced Electronics
Descriptor(s):
*GALLIUM ARSENIDES, *RADIATION EFFECTS, *HIGH ELECTRON MOBILITY TRANSISTORS, BUFFERS, CONTROL, RADIATION, ALUMINUM GALLIUM ARSENIDES, STRUCTURES, RELIABILITY, PARTICLES, GAMMA RAYS, GREECE, ALPHA PARTICLES, COBALT, FAST NEUTRONS, NEUTRONS, HELIUM, GALLIUM, ARSENIDES, SILICON, DEFECTS(MATERIALS), ELECTRICAL PROPERTIES, HETEROJUNCTIONS, DEGRADATION, MODELS, LAYERS
Field(s)/Group(s):
Radiation and Nuclear Chemistry, Electrical and Electronic Equipment, Solid State Physics
Keyword(s):
HEWS, CHARGE CONTROL, DONOR, MESFET(METAL EPITAXIAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR), ATHENS, FOREIGN REPORTS
Report Date:
1992 Dec 31