Gate-All-Around Device

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Abstract:

The gate-all-around device is an SOI MOS field-effect transistor. The gate electrode and the thin gate oxide are wrapped around the active channel region. No other insulator field oxide or buried oxide is in contact with the active region of the device. The gate-all-around device exhibits a high transconductance up to 4 times that of a normal SOI transistor, an ideally sharp subthreshold slope, and demonstrates the concept of volume inversion in the SOI films. Both n-channel and p-channel devices have been fabricated.

Author(s):
Smeys, P. ; Colinge, J. P.
Author Organization(s):
INTERUNIVERSITY MICRO-ELECTRONICS CENTER LOUVAIN (BELGIUM)
Descriptive Note:
Final technical rept. 5 Jul 1991-4 Jul 1992
Pagination:
0064

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
RHD-04
Contract/Grant Number(s):
AFOSR-90-0360
Task Number(s):
J3
Project Number(s):
2306
Monitor Series:
EOARD
 Subject Terms
Joint Capability Areas:
JCA_1.2_Force Preparation; JCA_1_Force Support; JCA_3.2_Engagement; JCA_3_Force Application
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*GATES(CIRCUITS), *FIELD EFFECT TRANSISTORS, *N TYPE SEMICONDUCTORS, *P TYPE SEMICONDUCTORS, *SILICON ON INSULATOR, *MOSFET SEMICONDUCTORS, FILMS, REGIONS, ELECTRODES, TRANSCONDUCTANCE, CHANNELS, SILICON, SLOPE, INVERSION, CIRCUITS
Field(s)/Group(s):
Electrical and Electronic Equipment, Solid State Physics
Report Date:
1992 Sep 04