Modeling, Simulation, and Analysis of Quantum Transport.

Research carried out by the Nanostructures Group in the Department of Electrical Engineering at Notre Dame was concerned with a variety of quantum transport and optical phenomena in mesoscopic structures. The major issues examined included analysis of the scope and performance of velocity modulation transistors for ultrafast switching applications, novel methods of fabricating quantum wires that can provide extremely high electron mobility and high optical absorption, the Aharonov-Bohm effect along with its basic physics and possible applications in quantum interference transistors with ultra-low-power-delay product, a variety of interference phenomena - both optical and electronic, study of quantum transport in ballistic electron waveguides and bends with special attention given to space charge effects, quantum transport in heavily doped structures with strong elastic scattering as well as magnetotransport theory, accurate treatment of real space transfer in quantum wells, a critical examination of the scope of quantum devices as both analog and digital elements either as a discrete device or in integrated circuits, and finally, interesting properties of periodic ballistic structures.