Waveform Relaxation Applied to Transient Device Simulation,

reportActive / Technical Report | Accession Number: ADA194992 | Open PDF

Abstract:

This paper investigates the possibility of accelerating the transient simulation of Metal Oxide Semiconductor devices by using waveform relaxation. Standard spatial discretization techniques are used to generate a large, sparsely-connected system of algebraic and ordinary differential equations in time. The waveform relaxation WR algorithm for solving such a system is described, and several theoretical results that characterize the convergence of WR for device simulation are given. In addition, one-dimensional experimental results are presented.

Author(s):
Reichelt, M. ; White, J. ; Allen, J. ; Odeh, F.
Author Organization(s):
MASSACHUSETTS INST OF TECH CAMBRIDGE
Supplementary Note:
Prepared in cooperation with IBM Thomas J. Watson Research Center, Yorktown Hts., NY.
Pagination:
0014

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-87-K-0825, $AFOSR-86-0164
 Subject Terms
Joint Capability Areas:
JCA_6.1.3_Switching and Routing
Modernization Areas:
Microelectronics
Communities of Interest:
Materials and Manufacturing Processes
Descriptor(s):
*METAL OXIDE SEMICONDUCTORS, *SEMICONDUCTOR DEVICES, ALGORITHMS, DIFFERENTIAL EQUATIONS, ONE DIMENSIONAL, RELAXATION, SIMULATION, TRANSIENTS, WAVEFORMS
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
1988 Mar 01