Investigation of Ion Implantation into High Purity and Controllably Doped Silicon and into Gallium Arsenide.

reportActive / Technical Report | Accession Number: ADA172942 | Open PDF

Abstract:

Analytical analysis of the data derived from the use of Rutherford backscattering-channelling measurements of disorder production in ion implanted semiconductors for the determination of damage production mechanisms. The redistribution and lattice incorporation of implanted impurities in Si during controlled furnace annealing to reorder the implantation damaged Si. The production of disorder in InP by light and heavy ion implantation as a function of implant flux and fluence and implant temperature. Investigation, in parallel with 3 of the damage creation and annealing processes associated with the interaction of the RBSchannelling analysis ion probe with heavy ion implantation damage in InP.

Author(s):
Carter, G.
Author Organization(s):
SALFORD UNIV (ENGLAND DEPT OF ELECTRICAL ENGINEERING
Descriptive Note:
Final rept. Jan 82-Feb 83,
Pagination:
0061

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFWAL-TR-86-4111
Contract/Grant Number(s):
F49620-82-C-0037
Task Number(s):
00
Project Number(s):
ILIR
Monitor Series:
TR-86-4111
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_5.3_Planning; JCA_1.2.3_Educating; JCA_1.2.7_Experimentation; JCA_1.3.2_Personnel Management; JCA_4.5.4_Requirements Definition; JCA_4.5_Operational Contract Support
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*ION IMPLANTATION, *SILICON, *INDIUM PHOSPHIDES, TEMPERATURE, ANNEALING, DAMAGE ASSESSMENT, IMPURITIES, CHANNELS
Field(s)/Group(s):
Solid State Physics
Keyword(s):
Rutherford Backscattering, Damage mechanisms, Heavy ions, Lightweight ions, PE61101F, WUAFWALILIR0088
Report Date:
1983 Feb 21