An Asymptotic Anslysis of Single-Junction Semiconductor Devices.

In this paper we present an analysis of the fundamental one-dimensional semiconductor equations describing potential, carrier, and current density distributions in single-junction semiconductor devices when an external voltage is applied to the contacts. We reformulate the model equations by appropriate scaling as a singularly perturbed two point boundary value problem for a system of nonlinear ordinary differential equations. The right-hand side of the system has a jump discontinuity with respect to the independent variable space-coordinate representing the junction between differently doped sides of the device. The solution components are assumed to be continuous across this junction. Author