Additional P(3/2) and P(1/2) Infrared Excited State Lines of Gallium and Indium in Silicon.

Rome, John J.; Spry, Robert J.; Chandler, Thomas C.; Brown, Gail J.; Covington, B. C.

Additional P(3/2) and P(1/2) Infrared Excited State Lines of Gallium and Indium in Silicon.

Active / Technical Report | Accession Number: ADA113645 |

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Abstract:

Infrared excitation spectra were measured for the p32 lines of gallium in silicon. Two missing lines were observed, and a previous weak or doubtful one was confirmed. Spectra were also obtained of the p12 lines of gallium and indium in silicon, demonstrating for the first time the 4p line for both dopants. Complete correspondence now exists between all observed excited state lines of gallium and indium in silicon and the lines of boron and aluminum, and with those predicted by theory. From the new spectral data, the spin-orbit splitting of the valence bands is calculated to be 42.62 or - 0.04 meV. Author

Author(s):

Rome, John J. ; Spry, Robert J. ; Chandler, Thomas C. ; Brown, Gail J. ; Covington, B. C.

Author Organization(s):

AIR FORCE WRIGHT AERONAUTICAL LABS WRIGHT-PATTERSON AFB OH

Descriptive Note:

Interim technical rept. Jun 79-Sep 81,

Pagination:

0023

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:

Approved For Public Release

RECORD

Collection: TR

Identifying Numbers

Report Number(s):

AFWAL-TR-81-4149

Task Number(s):

Q1

Project Number(s):

2306

Subject Terms

Joint Capability Areas:

JCA_5_Command and Control; JCA_1.2.3_Educating

Modernization Areas:

Microelectronics

Communities of Interest:

Advanced Electronics

Descriptor(s):

*Infrared spectroscopy, *Excitation, *Spectral lines, Gallium compounds, Spin states, Molecular orbitals, Silicon, Indium compounds, Valence bands, Infrared spectra, Aluminum, Boron, Theory, Predictions

Field(s)/Group(s):

Atomic and Molecular Physics and Spectroscopy, Nuclear Physics and Elementary Particle Physics

Keyword(s):

WUAFWAL2306Q101, PE62102F

Report Date:

1982 Feb 01