Basic Improvements in Substrate InP Material.

reportActive / Technical Report | Accession Number: ADA113237 | Open PDF

Abstract:

Different methods for the synthesis of Indium Phosphide were devised and growths evaluated for photoluminescence, mobility, carrier concentration, and resistivity. Single crystals of InP were grown doped with Fe, Cr, Zn, and S and evaluated by photoluminescence, van der Pauw analysis and X-ray topography. Author

Author(s):
Hyder, S. B.
Author Organization(s):
VARIAN ASSOCIATES INC PALO ALTO CA SOLID STATE LAB
Descriptive Note:
Final rept. Jan 79-Jan 82,
Supplementary Note:
DOI: 10.21236/ADA113237
Pagination:
0042

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ARO-16041.3-EL
Contract/Grant Number(s):
DAAG29-79-C-0009
Monitor Series:
16041.3-EL
 Subject Terms
Joint Capability Areas:
JCA_6.3.3_Spectrum Management; JCA_6_Net Centric; JCA_5_Command and Control; JCA_6.3_Net Management; JCA_6.1_Information Transport; JCA_5.3_Planning
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*Substrates, *Indium phosphides, *Charge carriers, *Synthesis(Chemistry), Photoluminescence, Single crystals, Diffusion, Methodology, Epitaxial growth, Solutions(Mixtures), Autoclaves
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
Autoclave systems, Institu puller synthesis, LPN ARO P 16041 EL
Report Date:
1982 Jan 15