The Construction of a Diffused Semiconductor Laser Diode.

reportActive / Technical Report | Accession Number: ADA053697 | Open PDF

Abstract:

This report describes some of the work undertaken by the author during a four months secondment to the Quantum Electronics Group of the Australian Post Office now Telecom Australia Research Laboratories in Melbourne. The secondment was arranged to provide an introduction to solid state device technology and to allow familiarisation with the methods of processing semiconductor material. The various procedures necessary for fabricating the simplest type of semiconductor laser, that with a diffused homojunction in the III-V compound semiconductor gallium arsenide, were investigated and are reported here. Certain practical difficulties are also highlighted, and these must be resolved before more advanced devices can be achieved. Author

Author(s):
Folkard, Margaret
Author Organization(s):
WEAPONS RESEARCH ESTABLISHMENT SALISBURY (AUSTRALIA)
Descriptive Note:
Technical rept.,
Pagination:
0025

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
WRE-TR-1583(A)
 Subject Terms
Joint Capability Areas:
JCA_4.6_Engineering
Modernization Areas:
Microelectronics; Directed Energy
Communities of Interest:
Advanced Electronics
Descriptor(s):
*SEMICONDUCTOR LASERS, *SEMICONDUCTOR DIODES, FOREIGN TECHNOLOGY, GALLIUM ARSENIDES, DIFFUSION, AUSTRALIA, SOLID STATE ELECTRONICS
Field(s)/Group(s):
Electrical and Electronic Equipment, Lasers and Masers, Solid State Physics
Keyword(s):
III V Compounds
Report Date:
1977 Mar 01