Computer Aided Engineering of Semiconductor Integrated Circuits

The objectives of this program are to remove the empiricism associated with the design and manufacturing of custom integrated circuits and to reduce the cost of these circuits by devising improved computer-aided engineering techniques. During this period emphasis has been placed on integrated circuit device and process modeling. For device modeling the results presented include the 1 development of two-dimensional model for MOS and bipolar transistors 2 development of a one-dimensional mathematical model for MOSFET operation 3 studies on equivalent circuit modeling of transistor operation 4 theoretical investigations of carrier mobility in the inversion layer of an MOSFET 5 mathematical investigations for high-speed analysis of devices 6 sheet resistivity test pattern model development, using Monte-Carlo techniques and 7 hot carrier studies for inhomogeneous semiconductor material. For process modeling the results presented include 1 ion implantation 2 thermal oxidation and chemical vapor deposition 3 silicon epitaxy and 4 thermal diffusion.