Improving the Understanding Heat and Carrier Transport in High Performance Electronic Heterostructure Devices through Proper Treatmentof Boundary Effects in Wide Bandgap Structures including AlN based and GaN-based Structures

This effort focuses on improving the fundamental understanding heat and carrier transport by better the modeling of phonons and phonon effects in electronic devices deals with the essential but unimplemented step of properly treating the full set of coupled phonon modes and boundary conditions at interfaces. In addition, this effort has considered LO phonon production from hot electrons that are accelerated form the 2DEG and eventually decay anharmonically into acoustic phonons which produce heat. Confinement effects have been taken into account in order to obtain correct LO phonon decay rates in dimensionally confined structures.