Ka-Band Front-End Monolithic Microwave Integrated Circuits (MMICs) and Transmit-Receive (T/R) Modules

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Abstract:

The US Army Research Laboratory has been evaluating and designing efficient broadband high-power amplifiers, switches, and high-dynamic-range low-noise amplifiers for use in networking and communications at millimeter wave frequencies. Gallium nitride GaN monolithic microwave integrated circuit MMIC technology has superior performance in power amplifier applications as well as for low-noise amplifiers with high dynamic range and the ability to survive large, potentially damaging, input power levels without the need for additional limiters at the system level. This technology works well for high-power, solid-state switches, as well. Compact MMIC transmitreceive modules for use in Ka-band 28 GHz applications, particularly transceiver arrays, were designed and submitted to Qorvo for fabrication. Future transceiver designs could build on this effort by adding functionality, integrating new features in a single GaN MMIC, or using 3-D packaging to utilize the best integrated-circuit technology for the particular function to create compact systems in a package.

Author(s):
Penn, John E. ; Darwish, Ali
Author Organization(s):
US Army Combat Capabilities Development Command Army Research Laboratory Adelphi United States
Descriptive Note:
Technical Report,01 Mar 2019,01 Sep 2019
Pagination:
0049

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release;

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ARL-TR-8855
 Subject Terms
Joint Capability Areas:
JCA_6.1.3_Switching and Routing; JCA_6_Net Centric; JCA_6.1_Information Transport; JCA_3.2_Engagement; JCA_3_Force Application; JCA_8_Building Partnerships
Modernization Areas:
Microelectronics; 5G
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
monolithic microwave integrated circuits, millimeter waves, power amplifiers, low noise amplifiers, transceivers, Ka band, Gallium nitrides, switches, fabrication, prototyPes, wafers, High electron mobility Transistors, gain, direct current
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
mmic (monolithic microwave integrated circuits), mmw (millimeter wave), ka band front end mmic, tr modules, tr (tranmit receive), gan (Gallium nitride), spdt (SinglePull DoubleThrow), spdt Switches, tr circuits, tr switches, Broadband Amplifiers, lna (low noise amplifiers), pa (power amplifiers), pwo (Prototype Wafer Option), hemt (High electron mobility Transistors), dc (direct current)
Report Date:
2019 Nov 01
Creation Date:
2019 Dec 13