Final Report: Extended-Wavelength Hot-Carrier Photodetectors From GaAs, Si to InAs/GaSb Type-II Structures (d. Research Area 4.3 Electronic Sensing ARO)

The proposed aims were to (1) design and (2) develop infrared photodetectors with lower dark current compared to conventional photodetectors with similar wavelength thresholds. In general, both the dark current and the photoresponse threshold are governed by the value of Delta (activation energy). Here, we propose to develop detectors where the dark current corresponds to a Delta, of a shorter wavelength detector, while the photoresponse threshold corresponds to an energy value Delta' (where Delta '< Delta ) giving a longer wavelength threshold.