Advancing Layered Two-Dimensional Semiconductors

Semiconductors form the basis of modern electronics and their success is a result of decades of research in material development, which ranges from high-quality crystalline samples to doping/alloying to engineering the semiconductor/metal interface. In this program, we aim to springboard the development of a relatively new class of two-dimensional (2D) semiconductors, the transition metal dichalcogenides, in an effort to exploit their atomically thin form factors that are ideal for Navy systems, including radiation-hardened electronics, optoelectronics, and sensors. Their 2D structure, coupled with a direct bandgap in the visible to near infrared, makes them highly suitable for ultralow-power electronics with low leakage and extreme electrostatic control. The program efforts rely on detailed spectroscopic characterization and theory to unravel the interplay between surface and defect states, and metal/semiconductor interfaces, which are essential for building advanced electronic systems for naval applications.