Final Report: Quantum Dot Lasers with Asymmetric Barrier Layers: A Novel Type of Semiconductor Lasers

reportActive / Technical Report | Accesssion Number: AD1204498 | Open PDF

Abstract:

The objective of this project was to explore the potential of a novel type of semiconductor lasers quantum dot (QD) lasers with asymmetric barrier layers (ABLs) for low-threshold, temperature-stable, high-power, and high-speed operation. To accomplish this goal, a comprehensive theory of static (threshold and power) and dynamic characteristics of ABL QD lasers has been developed and recommendations have been provided for the development of ABL QD lasers that will significantly outperform conventional QD lasers.

Author(s):
Asryan, Levon V.
Author Organization(s):
VIRGINIA POLYTECHNIC INST AND STATE UNIV BLACKSBURG
Funding Organization(s):
ARMY RESEARCH LAB RESEARCH TRIANGLE PARK NC, RESEARCH TRIANGLE PARK , NC
Document Type:
Technical Report/Final Report
Publication Date:
2021 Sep 20
Pagination:
145

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution Code:
A - Approved For Public Release
Distribution Statement: Public Release

RECORD

Collection: TRECMS
Identifying Numbers
Report Number(s):
70668-EL.17
Grant Number(s):
W911NF-17-1-0432
Program Element Number(s):
PE611102
Subject Terms
Modernization Areas:
Quantum Science and Computing
Communities of Interest:
Advanced Electronics
Descriptor(s):
semiconductors, laser science, energy bands, quantum dot lasers, quantum well lasers, quantum wells, laser diodes, optoelectronics, quantum efficiency, quantum electronics, electronics laboratories, modules (electronics), power electronics, laser beams, quantum dots, communication systems, optical properties
Keyword(s):
qd(quantum dots), abl(asymmetric barrier layers), lcc(light-current characteristic), dti(double tunneling injection), ocl(optical confinement layer)
Subject Categories:
Physics
Creation Date:
2023 Jun 27
Update Date:
2023 Jul 14