Fundamental and Applied Wide Bandgap Semiconductor Device Modeling For Next Generation Naval Applications

reportActive / Technical Report | Accesssion Number: AD1175081 | Open PDF

Abstract:

This final report provides a synopsis of the progress made by Dr. Raghav Khannas research team at The University of Toledo (UT) during the entire performance period of the grant indicated on the title page. Several projects were undertaken during the performance period, each of which will be elucidated in greater detail in subsequent sections of this report.

Author(s):
Khanna, Raghav
Author Organization(s):
TOLEDO UNIV OH
Funding Organization(s):
OFFICE OF NAVAL RESEARCH ARLINGTON VA, ARLINGTON , VA
Document Type:
Technical Report/Final Report
Publication Date:
2022 Jul 25
Pagination:
19

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution Code:
A - Approved For Public Release
Distribution Statement: Public Release

RECORD

Collection: TRECMS
Identifying Numbers
Grant Number(s):
N00014-18-1-2676
Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
power electronics, semiconductor devices, semiconductors, failure mode and effect analysis, charge carriers, field effect transistors, p-n junction diodes, wide bandgap semiconductors, algorithms, electronics, electrons, frequency, high voltage, materials, reliability, silicon carbide, students
Keyword(s):
High-Frequency Dispersion Effects, gan (GALLIUM NITRIDES), gan devices, Dispersion Effects, tcad (technology-computer aided design)
Subject Categories:
Electrotechnology and Fluidics
Creation Date:
2022 Jul 26
Update Date:
2022 Sep 19