Development of Beta Gallium Oxide on Large Area Substrates

reportActive / Technical Report | Accesssion Number: AD1142300 | Open PDF

Abstract:

In this program, we have explored high-quality homoepitaxy growth with beta-Ga2O3 using conventional PAMBE and MOCATAXY on different crystal orientations, and MOCVD (with Agnitron Collaboration) for high-mobility epitaxial films. We have also developed device design and processing with Ga2O3 for high-power applications.

Author(s):
Speck, James
Author Organization(s):
CALIFORNIA UNIV SANTA BARBARA
Funding Organization(s):
AIR FORCE OFFICE OF SCIENTIFIC RESEARCH ARLINGTON VA, ARLINGTON , VA
Document Type:
Technical Report/Final Report
Publication Date:
2021 Jun 27
Pagination:
13

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution Code:
A - Approved For Public Release
Distribution Statement: Public Release

RECORD

Collection: TRECMS
Identifying Numbers
Report Number(s):
AFRL-AFOSR-VA-TR-2021-0060
Grant Number(s):
FA9550-18-1-0059
Program Element Number(s):
PE61102F
Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
schottky diodes, semiconductors, epitaxial growth, energy bands, scientific research, materials, oxides, films, california, diodes, low temperature, metal-semiconductor junctions, orientation (direction), radiation, silicon carbide, conduction bands, crystals
Keyword(s):
mbe growth, mocataxy(Metal Oxide Catalyzed Epitaxy), homoepitaxy growth, epitaxial films, pambe, hall measurment, Agnitron Technology
Subject Categories:
Physics
Creation Date:
2021 Jul 20
Update Date:
2021 Aug 25