Instructions: Diener Hexamethyldisiloxane (HMDSO) Plasma-Enhanced Chemical Vapor Deposition (PECVD)

reportActive / Technical Report | Accesssion Number: AD1110600 | Open PDF

Abstract:

This report describes the procedure to set up a modified Diener plasma-enhanced chemical vapor deposition system using a liquid hexamethyldisiloxane (HMDSO) precursor. The user, via gas control, determines the chemistry of the deposited thin films. The composition is controllable from approximately 50 atomic percent carbon to less than 1 atomic percent carbon continuously. The control is realized by balancing the ratios of the partial pressures of the input gasses, argon and/or oxygen, with the HMDSO partial pressure. This permits the deposition of polymer thin films to silicon dioxide films with a single nontoxic precursor.

Author(s):
Parker, Thomas C
Author Organization(s):
CCDC Army Research Laboratory
Funding Organization(s):
Publication Date:
2020 Sep 01
Pagination:
0

Security Markings

RECORD

Collection: TRECMS
Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
chemistry, chemical vapor deposition, partial pressure, silicon dioxide, thin films, vapor deposition, films, materials, alcohols, base pressure, chambers, precursors, pumping, pumps, vacuum, vacuum chambers, gas flow
Keyword(s):
water barrier, hexamthyldisiloxane, HMDSO
Subject Categories:
Chemistry
Update Date:
2020 Oct 30