Temperature Insensitive Transistor

A study was undertaken of the problems associated with the design and fabrication of practical transistors which are relatively insensitive to changes of temperature over the temperature range 0 - 75 degree C. The major emphasis was to explore the theoretical design aspects of the problem, select an approach, and substantiate the design by actual construction of twelve devices. The problem of h(FE) temperature compensation was studied by examination of the fundamental physical parameters affecting h(FE). Variable emitter periphery, Fletcher effect, parallel transistor, and diode-transistor effects were considered. Both lumped and distributed device concepts were evolved for design approaches. Preliminary tests of design concepts were achieved by circuit analogues.