A1GaN/GaN HEMT High-Poeer and Low-Noise Performance at f>20 GHz

Smorchkova, I. P.; Wojtowicz, M.; Tsai, R.; Sandhu, R.; Barsky, M.

A1GaN/GaN HEMT High-Poeer and Low-Noise Performance at f>20 GHz

Active / Technical Report | Accession Number: ADP015121 | Open PDF

Abstract:

In this paper, we report on the power and noise performance of AlGaNGaN HEMTs in the K 18-27 GHz band. At 20 GHz, a record CW output power of 2 W with an associated gain of 8 113 and PAE of 33 has been achieved on a 8-finger 0.2 x 500 micronmeter device. Minimum noise figure of 1.4113 has been achieved on a 0.15 micronmeter x 200 micronmeter device at 26 GHz. The data demonstrate the viability of AlGaNGaN HEMTs for high-frequency power and LNA applications.

Author(s):

Smorchkova, I. P. ; Wojtowicz, M. ; Tsai, R. ; Sandhu, R. ; Barsky, M.

Author Organization(s):

SOUTH CAROLINA UNIV COLUMBIA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Descriptive Note:

Conference paper

Supplementary Note:

This article is from ADA423729 Proceedings IEEE Lester Eastman Conference on High Performance Devices at University of Delaware, Newark, Delaware, August 6, 7, and 8. 2002

Pagination:

0006

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:

Approved For Public Release

RECORD

Collection: TR

Identifying Numbers

Monitor Series:

XD

Subject Terms

Joint Capability Areas:

JCA_1_Force Support

Communities of Interest:

Advanced Electronics

Descriptor(s):

*PERFORMANCE(ENGINEERING), *MICROWAVE EQUIPMENT, *BREAKDOWN(ELECTRONIC THRESHOLD), *HIGH ELECTRON MOBILITY TRANSISTORS, *ALUMINUM GALLIUM NITRIDES, OUTPUT, HIGH FREQUENCY, CONTINUOUS WAVES, REPORTS, NOISE, LOW NOISE, GALLIUM NITRIDES

Field(s)/Group(s):

Electrical and Electronic Equipment, Electricity and Magnetism, Inorganic Chemistry

Keyword(s):

COMPONENT REPORTS

Report Date:

2002 Jan 01

Creation Date:

2004 Jun 30