Investigation of Hot Electron Distribution by Interband Transmittance in N-Type InGaAs/GaAs MQW Heterostructures

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Abstract:

High lateral electric field effects on transmittance in selectively doped n-type MQW InGaAsGaAs heterostructures with declination-doped barriers have been studied. The peculiarities of the transmittance modulation spectra associated with electron heating have been observed. The effective temperature of hot electrons in the quantum wells was obtained.

Author(s):
Revin, D. G. ; Aleshkin, V. Ya. ; Gaponova, D. M. ; Gavrilenko, V. I. ; Krasil'nik, Z. F.
Author Organization(s):
RUSSIAN ACADEMY OF SCIENCES NIZHNY NOVGOROD INSTITUTE FOR PHYSICS OF MICROSTRUCTURES
Descriptive Note:
Conference proceedings
Supplementary Note:
This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings
Pagination:
0003

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: Hard Copy Only.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
QW/SL.15P
Monitor Series:
X5
 Subject Terms
Joint Capability Areas:
JCA_6.3.3_Spectrum Management; JCA_6.3_Net Management; JCA_6_Net Centric
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*PHOTOLUMINESCENCE, *MULTIPLE QUANTUM WELLS, THERMAL PROPERTIES, GALLIUM ARSENIDES, TRANSMITTANCE, HETEROGENEITY, RUSSIA, N TYPE SEMICONDUCTORS
Field(s)/Group(s):
Electrooptical and Optoelectronic Devices, Solid State Physics
Keyword(s):
COMPONENT REPORT, FOREIGN REPORTS, INDIUM GALLIUM ARSENIDES
Report Date:
2001 Jun 01
Creation Date:
2002 Dec 11