Electrostatic Force Microscopy, Principles and Applications to Semiconductor Materials and Devices

Girard, Paul

Electrostatic Force Microscopy, Principles and Applications to Semiconductor Materials and Devices

Active / Technical Report | Accession Number: ADP013199 | Open PDF

Abstract:

We have shown the principles on which is based the Electrostatic Force Microscopy and the expected peffomances. Basing on experimental data we have seen how to interpret the contrasts observed in the experiments. Then we have shown typical observations on semiconductors. We can say that the EFM is now an established method to explore local properties of semiconductor materials structures and devices but the field can be widened by new developments.

Author(s):

Girard, Paul

Author Organization(s):

MONTPELLIER-2 UNIV (FRANCE)

Descriptive Note:

Conference proceedings

Supplementary Note:

This article is from ADA408025 Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings

Pagination:

0003

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:

Approved For Public Release

Distribution Statement:

Availability: Hard Copy Only.

RECORD

Collection: TR

Identifying Numbers

Report Number(s):

NC.01I

Monitor Series:

X5

Subject Terms

Joint Capability Areas:

JCA_1.1_Force Management; JCA_1_Force Support

Communities of Interest:

Advanced Electronics

Descriptor(s):

*SEMICONDUCTORS, *MICROSCOPY, STRUCTURES, FRANCE, ELECTROSTATICS

Field(s)/Group(s):

Solid State Physics

Keyword(s):

COMPONENT REPORT, FOREIGN REPORTS, SCANNING PROBE MICROSCOPY, ELECTROSTATIC FORCE MICROSCOPY

Report Date:

2001 Jun 01

Creation Date:

2002 Dec 11