Room Temperature Single Electron Devices by STM/AFM Nano-Oxidation Process

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Abstract:

A single electron transistor SET and a single electron memory were fabricated using the improved pulse-mode AFM nano-oxidation process. A single electron transistor which works as an electrometer for detecting the potential of the memory node of the single electron memory showed the clear Coulomb oscillation characteristics with the periods of 2.1 V at room temperature. A single electron memory showed the hysteresis loop by the return trip of the memory bias when starting from O V to 10 V and again coming back to O V.

Author(s):
Matsumoto, Kazuhiko
Author Organization(s):
ELECTROTECHNICAL LAB TSUKUBA (JAPAN)
Descriptive Note:
Conference proceedings
Supplementary Note:
This article is from Nanostructures: Physics and Technology Intl Symposium (8th), p. 472-477 This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings
Pagination:
0006

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: Hard Copy Only.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ND.01I
Monitor Series:
X5
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*MEMORY DEVICES, *TRANSISTORS, ALUMINUM GALLIUM ARSENIDES, JAPAN, BIAS, HYSTERESIS, NANOSTRUCTURES
Field(s)/Group(s):
Solid State Physics, Computer Hardware
Keyword(s):
COMPONENT REPORT, FOREIGN REPORTS, *SINGLE ELECTRON TRANSISTORS, SELF ORGANIZED STRUCTURES
Report Date:
2000 Jun 23
Creation Date:
2002 Nov 20