Charge Separation in Scrolled Heterostructures

reportActive / Technical Report | Accession Number: ADP013115 | Open PDF

Abstract:

We calculate strains in the wall of semiconductor InAsGaAs nanotube and their effects on the band edges. We show that the maxima of the electron and hole wave functions are shifted in opposite directions from the middle of the tube wall.

Author(s):
Osadchii, V. M. ; Prinz, V. Ya.
Author Organization(s):
RUSSIAN ACADEMY OF SCIENCES NOVOSIBIRSKINST OF SEMICONDUCTOR PHYSICS
Descriptive Note:
Conference proceedings
Supplementary Note:
This article is from Nanostructures: Physics and Technology Intl Symposium (8th), p. 428-431 This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: Hard Copy Only.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
QWR/QD.22P
Monitor Series:
X5
 Subject Terms
Joint Capability Areas:
JCA_6.3.3_Spectrum Management
Communities of Interest:
Advanced Electronics
Descriptor(s):
*NANOSTRUCTURES, GALLIUM ARSENIDES, WALLS, HETEROGENEITY, RUSSIA, MOLECULAR BEAM EPITAXY, INDIUM ARSENIDES
Field(s)/Group(s):
Solid State Physics
Keyword(s):
COMPONENT REPORT, FOREIGN REPORTS, *HETEROSTRUCTURES, *NANOTUBES, HETEROLAYERS
Report Date:
2000 Jun 23
Creation Date:
2002 Nov 20