STM Investigation of a Strong Electric Field Effect on Local Photocurrent Spectra in InAs/GaAs Quantum Dot Heterostructures

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Abstract:

We demonstrate a possibility of using scanning tunneling microscope STM for a high spatial resolution study of photocurrent spectra of quantum-dimensional structures The effect produced by an electric field on the position and intensity of the size quantization levels maxima in the local photocurrent spectra for InAsGaAs structures with quantum dots located near the sample surface is investigated.

Author(s):
Aleshkin, V. Ya. ; Biryukov, A. V. ; Gaponov, S. V. ; Danil'tsev, V. M. ; Mironov, V. L.
Author Organization(s):
RUSSIAN ACADEMY OF SCIENCES NIZHNY NOVGOROD INSTITUTE FOR PHYSICS OF MICROSTRUCTURES
Descriptive Note:
Conference proceedings
Supplementary Note:
This article is from Nanostructures: Physics and Technology Intl Symposium (8th), p. 326-329 This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: Hard Copy Only.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
NC.03
Monitor Series:
X5
 Subject Terms
Joint Capability Areas:
JCA_6.3.3_Spectrum Management; JCA_6.3_Net Management; JCA_6_Net Centric
Modernization Areas:
Quantum Science and Computing
Communities of Interest:
Advanced Electronics
Descriptor(s):
*TUNNELING(ELECTRONICS), *QUANTUM DOTS, SCANNING ELECTRON MICROSCOPES, ELECTROLUMINESCENCE, GALLIUM ARSENIDES, HETEROJUNCTIONS, QUANTIZATION, RUSSIA, PHOTOELECTRICITY, INDIUM ARSENIDES
Field(s)/Group(s):
Solid State Physics
Keyword(s):
COMPONENT REPORT, FOREIGN REPORTS
Report Date:
2000 Jun 23
Creation Date:
2002 Nov 20