Built-In Electric Fields and Electronic Structure of GaN/AlN QDs

reportActive / Technical Report | Accession Number: ADP013055 | Open PDF

Abstract:

We present a theory of the electronic structure of GaNAIN QDs including built-in strain and electric field effects. A simple analytical formula is derived for the Fourier transform of the built-in electrostatic potential. The QD carrier spectra and wave functions are calculated using an original method we have developed based on an 8-band k.P model. It is shown that due to the strong built-in electric field, the holes are localized in the wetting layer just below the QD bottom, while electrons are pushed up to the pyramid top. The energy of the ground optical transition is found to be in good agreement with available experimental data.

Author(s):
Andreev, A. D. ; O'reilly, E. P.
Author Organization(s):
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Descriptive Note:
Conference proceedings
Supplementary Note:
Pres: 8th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia, 19-23 Jun 2000, p198-201. This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: Hard Copy Only.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
WBGN.02
Monitor Series:
X5
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Air Platforms
Descriptor(s):
*QUANTUM DOTS, FOURIER TRANSFORMATION, OPTICAL PROPERTIES, EXPERIMENTAL DATA, ELECTRIC FIELDS, ELECTRONIC STATES, RUSSIA, WAVE FUNCTIONS, GALLIUM NITRIDES, ALUMINUM NITRIDES
Field(s)/Group(s):
Solid State Physics
Keyword(s):
COMPONENT REPORT, FOREIGN REPORTS, ELECTROSTATIC POTENTIALS
Report Date:
2000 Jun 23
Creation Date:
2002 Nov 20