Theory of Threshold Characteristics of Quantum Dot Lasers

reportActive / Technical Report | Accession Number: ADP013004 | Open PDF

Abstract:

A theory of the gain and threshold current of a semiconductor quantum dot QD laser has been developed which takes account of the line broadening caused by fluctuations in QD size. Expressions for the threshold current versus the surface density of QDs. QD size dispersion and total losses have been obtained in explicit form. Optimization of the structure has been carried out, aimed at minimizing the threshold current density. The characteristic temperature of QD laser has been calculated considering carrier recombination in the optical confinement layer and violation of the charge neutrality in QDs.

Author(s):
Asryan, L. V. ; Suris, R. A.
Author Organization(s):
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Descriptive Note:
Conference Proceedings
Supplementary Note:
Pres: 8th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 19-23 Jun 2000, p6-11. This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings
Pagination:
0006

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: Hard Copy Only.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
LOED.02I
Monitor Series:
X5
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*QUANTUM DOTS, *QUANTUM WELL LASERS, OPTICAL PROPERTIES, OPTIMIZATION, NEUTRAL, THRESHOLD EFFECTS, CURRENT DENSITY, RUSSIA
Field(s)/Group(s):
Lasers and Masers, Solid State Physics
Keyword(s):
COMPONENT REPORT, FOREIGN REPORTS
Report Date:
2000 Jun 23
Creation Date:
2002 Nov 20