Effect of Relaxation Processes on Auger Recombination in Semiconductor Quantum Wells

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Abstract:

In this paper we study the effect of carrier relaxation processes on Auger recombination in semiconductor quantum wells. It is shown that the calculation in the framework of the conventional perturbation theory is not applicable in the case of narrow wells and wires because of its divergence. Therefore a more rigid Green function techniques is used. The relaxation processes are shown to increase Auger recombination coefficient. however their influence becomes weaker with decrease of the QW width. The transition from the QW to the bulk case is explicitly carried out.

Author(s):
Polkovnikov, A. S. ; Dogonkine, E. B. ; Zegrya, G. G.
Author Organization(s):
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Descriptive Note:
Conference proceedings
Supplementary Note:
Pres: 7th Int Symp Nanostructures: Physics and Technology; St Petersburg, Russia, 14-18 Jun 1999. p386-389. This article is from ADA407055 Nanostructures: Physics and Technology. 7th International Symposium. St. Petersburg, Russia, June 14-18, 1999 Proceedings
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: Hard Copy Only.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
QW/SL.16P
Monitor Series:
X5
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_5.3_Planning
Communities of Interest:
Materials and Manufacturing Processes
Descriptor(s):
*QUANTUM WELLS, SEMICONDUCTORS, PERTURBATION THEORY, RUSSIA, RELAXATION TIME, CHARGE DENSITY, RECOMBINATION REACTIONS, GREENS FUNCTIONS, AUGER ELECTRONS
Field(s)/Group(s):
Solid State Physics, Atomic and Molecular Physics and Spectroscopy
Keyword(s):
COMPONENT REPORT, FOREIGN REPORTS, COULOMB INTERACTIONS
Report Date:
1999 Jun 18
Creation Date:
2002 Nov 20