The Step-Like Features on the I-V Curves of the Resonant Tunneling Diodes: Current Vortexes?

reportActive / Technical Report | Accession Number: ADP012919 | Open PDF

Abstract:

This article presents resonant tunneling current measurements in double tunnel resonat barrier structures of various diameters but with otherwise the identical structure. I-V curves of samples with large diameters demonstrate step-like features in the negative differential conductance NDC region of the I-V curve. The features could be distinguished from the similar ones related to external circuit oscillations. it is shown that self-excitation of the current vortexes in the barrier region could be a possible reason for the observed step-like phenomena.

Author(s):
Volkov, V. A. ; Feiginov, M. ; Dubrovskii, Y. V. ; Popov, V. G. ; Vdovin, E. E.
Author Organization(s):
SHEFFIELD UNIV (UNITED KINGDOM) DEPT OF PHYSICS
Descriptive Note:
Conference proceedings
Supplementary Note:
Pres: 7th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 14-18 Jun 1999. p255-258. This article is from ADA407055 Nanostructures: Physics and Technology. 7th International Symposium. St. Petersburg, Russia, June 14-18, 1999 Proceedings
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: Hard Copy Only.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TP.02
Monitor Series:
X5
 Subject Terms
Joint Capability Areas:
JCA_1.2_Force Preparation; JCA_1_Force Support
Communities of Interest:
Advanced Electronics
Descriptor(s):
*TUNNELING(ELECTRONICS), *SEMICONDUCTOR DIODES, MEASUREMENT, CONDUCTIVITY, RESONANCE, BARRIERS, RUSSIA, CIRCUIT ANALYSIS
Field(s)/Group(s):
Solid State Physics, Electricity and Magnetism
Keyword(s):
COMPONENT REPORT, FOREIGN REPORTS, CURRENT VORTICES, RESONANT TUNNELING DIODES
Report Date:
1999 Jun 18
Creation Date:
2002 Nov 20