High Power Broadband Singlelobe InGaAsP/InP Superluminescent Diode

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Abstract:

Superluminescent diodes SLDs operating in 1300-1550 nm wavelength range with high output power 40 mW wide spectra width 65 nm at FWHM low modulation depth 1 and singlelobe far field pattern have been fabricated. The optimum SLD is 10 tilted mesa-stripe construction with back absorption section based on broad gain profile InGaAsPInP separate confinement double heterostructure.

Author(s):
Pikhtin, N. A. ; Leshko, A. Y. ; Lyutetskiy, A. V. ; Shuravin, S. A. ; Stankevich, A. L.
Author Organization(s):
RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST
Descriptive Note:
Conference proceedings
Supplementary Note:
Pres: 7th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia. 14-18 Jun 1999. p150-153. This article is from ADA407055 Nanostructures: Physics and Technology. 7th International Symposium. St. Petersburg, Russia, June 14-18, 1999 Proceedings
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Availability: Hard Copy Only.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
LOED.11P
Monitor Series:
X5
 Subject Terms
Modernization Areas:
Quantum Science and Computing
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*LUMINESCENCE, *LIGHT EMITTING DIODES, HIGH POWER, BROADBAND, HETEROGENEITY, RUSSIA, ABSORPTION, INDIUM PHOSPHIDES, MODULATION
Field(s)/Group(s):
Solid State Physics, Electrooptical and Optoelectronic Devices
Keyword(s):
*SUPERLUMINESCENT DIODES, COMPONENT REPORT, FOREIGN REPORTS, DOUBLE HETEROSTRUCTURES
Report Date:
1999 Jun 18
Creation Date:
2002 Nov 20