Properties of 2D and 3D Dielectric Structures Fabricated by Electrochemical Dissolution of III-V Compounds

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Abstract:

Porous layers and membranes representing 2D and 3D dielectric structures were fabricated on different III-V compounds GaAs, InP, GaP by electrochemical etching techniques. Nonlithographically fabricated ordered nanopore arrays in InP are reported for the first time. We show that the reflectance from nanostructured InP is lower than that from bulk InP in the spectral interval 1.5 - 2.2 eV. The artificial anisotropy induced by nanotexturization was studied in porous GaP membranes and the refractive indices for ordinary and extraordinary beams were evaluated.

Author(s):
Tiginyanu, I. M. ; Langa, S. ; Christophersen, M. ; Carstensen, J. ; Sergentu, V.
Author Organization(s):
CHRISTIAN-ALBRECHTS UNIV KIEL (GERMANY)
Descriptive Note:
Symposium proceedings
Supplementary Note:
Pub in: Materials Research Society Symposium Proceedings, Volume 692. This article is from ADA405047 Progress in Semiconductor Materials for Optoelectronic Applications Symposium held in Boston, Massachusetts on November 26-29, 2001.
Pagination:
0006

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
F49620-01-1-0347, N00014-01-1-0649
Monitor Series:
AFOSR, ONR
 Subject Terms
Joint Capability Areas:
JCA_5.3_Planning; JCA_5_Command and Control
Modernization Areas:
Microelectronics; Directed Energy
Communities of Interest:
Advanced Electronics
Descriptor(s):
*DIELECTRICS, OPTICAL PROPERTIES, TWO DIMENSIONAL, MORPHOLOGY, REFRACTIVE INDEX, FABRICATION, ELECTROCHEMISTRY, ETCHING, THREE DIMENSIONAL, ANISOTROPY, GERMANY, GROUP III COMPOUNDS, GROUP V COMPOUNDS, REFLECTANCE, INDIUM PHOSPHIDES
Field(s)/Group(s):
Electricity and Magnetism, Optics
Keyword(s):
FOREIGN REPORTS, COMPONENT REPORT
Report Date:
2002 Jan 01
Creation Date:
2002 Sep 11