Optical Characterization of IV-VI Mid-Infrared VCSEL

reportActive / Technical Report | Accession Number: ADP012633 | Open PDF

Abstract:

PbSePbSrSe multiple-quantum-well MQW structures and PbSrSe thin films were grown on BaF2 111 substrates by molecular beam epitaxy MBE and characterized by Fourier transform inflated FTIR spectrometer. Strong photoluminescence without Fabry-Perot interference fringes was observed even at room temperature from the MQW structures. The peak energies for the MQW structures with different well widths shifted to high energy with increasing temperature. The absorption edge of PbSrSe layer was determined by transmission spectra. Meanwhile, we designed and fabricated lambda-4.1 micrometers MQW vertical cavity surface emitting laser VCSEL. A power output of 40 mW was obtained at room temperature. The room temperature threshold pump density is 200 kWsq cm.

Author(s):
Zhao, F. ; Wu, H. ; Zheng, T. ; Mccann, P. J. ; Majumdar, A.
Author Organization(s):
OKLAHOMA UNIV NORMAN SCHOOL OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
Descriptive Note:
Symposium proceedings
Supplementary Note:
Pub in: Materials Research Society Symposium Proceedings, Volume 692. This article is from ADA405047 Progress in Semiconductor Materials for Optoelectronic Applications Symposium held in Boston, Massachusetts on November 26-29, 2001.
Pagination:
0007

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
F49620-01-1-0347, N00014-01-1-0649
Monitor Series:
AFOSR, ONR
 Subject Terms
Modernization Areas:
Quantum Science and Computing
Communities of Interest:
Advanced Electronics
Descriptor(s):
*OPTICAL PROPERTIES, *VERTICAL CAVITY SURFACE EMITTING LASERS, FOURIER TRANSFORMATION, PHOTOLUMINESCENCE, THIN FILMS, MOLECULAR BEAM EPITAXY, MULTIPLE QUANTUM WELLS, BAND GAPS
Field(s)/Group(s):
Lasers and Masers, Solid State Physics
Keyword(s):
COMPONENT REPORT
Report Date:
2002 Jan 01
Creation Date:
2002 Sep 11