A Novel Approach to Obtain GeSbTe-Based High Speed Crystallizing Materials for Phase Change Optical Recording
Abstract:
A new approach is proposed to obtain fast crystallizing materials based on a conventional GeSbTe alloy for rewritable phase change optical data storage. By means of co-sputtering, Ge1Sb2Te4 alloy was mixed with Sn1Bi2Te4 alloy so as to form pseudo-binary alloys Ge1Sb2Te41-xSn1Bi2Te4x x is a mole fraction. From structural and optical analyses of the Co sputtered and annealed alloy films, the formation of stable crystalline single phases was observed along with a Vegards law behavior, suggesting a homogeneous mixing of the two alloys. By use of a 4 layered disk with Ge1Sb2Te40.85Sn1Bi2Te40.15 recording layer, a preliminary test of writing and erasing was carried out and the results were compared with the case of the disk with Ge1Sb2Te4 recording layer. The Ge1Sb2Te40.85Sn1Bi2Te40.15 recording layer was found to yield markedly higher erasibility, especially with increasing disk linear velocity.