Fabrication of GaAlAs/GaAs Single Quantum Well Gain-Coupled Distributed Feedback Lasers,

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Abstract:

The gain-coupled distributed feedback DFB semiconductor laser is regarded as a promising light source for applications such as optical communication and optical measurement, because of its unique features such as complete single longitudinal mode property, immunity to facet reflection, and resistance to external optical feedback. The introduction of the quantum well structure to the gain-coupled DFB laser is thought to bring further advantages. We are trying to fabricate gain-coupled DFB lasers with a single quantum well SQW active layer. In this paper, we report the preliminary experiment on the fabrication procedure and the characteristics of the SQW gain-coupled DFB laser.

Author(s):
Luo, Y. ; Cao, H. L. ; Dobashi, M. ; Hosomatsu, H. ; Nakano, Y.
Author Organization(s):
TOKYO UNIV (JAPAN)
Supplementary Note:
This article is from 'Advanced Processing and Characterization Technologies. Fabrication and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits Held in Clearwater, Florida on 8-10 May 1991. American Vacuum Society Series 10,' AD-A254 162, p168-171.
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*FABRICATION, *GALLIUM ARSENIDE LASERS, EXTERNAL, FEEDBACK, GAIN, IMMUNITY, LAYERS, LIGHT SOURCES, MEASUREMENT, OPTICAL COMMUNICATIONS, REFLECTION, RESISTANCE, SEMICONDUCTOR LASERS, STRUCTURES, JAPAN
Field(s)/Group(s):
Lasers and Masers, Manufacturing and Industrial Engineering and Control of Production Systems
Keyword(s):
Component Reports, Quantum wells, Distributed feedback
Report Date:
1992 Jul 01