Selective Epitaxial Growth of AlGaAs by MOCVD Using Dialkylmetalchloride,

Selective epitaxial growth by metalorganic chemical vapor deposition MOCVD is expected to be one of the important technologies to fabricate microstructures of semiconductor devices. Recently, selective epitaxial growth has been applied to fabricate quantum well wires. In the fabrication of such a fine structure, good selectivity of deposition and excellent controllability of the ultrafine structure of epilayers is required. Many studies concerning to the selective epitaxial growth of III-V compound semiconductors by MOCVD have been reported. We investigated the selective epitaxial growth of GaAs and AlGaAs by atmospheric pressure AP-MOCVD using TMGA and TMAI.