Femtosecond Refractive and Absorptive Nonlinearities Due to Real Carriers in GaAs,

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Abstract:

The optical properties of gallium arsenide continue to attract interest because of the development of electro-optical and all-optical devices made of III-V semiconductors. The study of ultrafast changes in optical constants both absorption coefficient and refractive index is especially important for developing high-speed and high-bit-rate devices.

Author(s):
Gong, T. ; Fauchet, P. M.
Author Organization(s):
ROCHESTER UNIV NY LAB FOR LASER ENERGETICS
Supplementary Note:
This article is from the 'Osa Topical Meeting Proceedings (4th) on Picosecond Electronics and Optoelectronics Held in Salt Lake City, Utah on 13-15 March 1991. Volume 9,' AD-A253 472, p253-259.
Pagination:
0007

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*SEMICONDUCTORS, *GALLIUM ARSENIDES, *ELECTROOPTICS, *NONLINEAR OPTICS, ABSORPTION, ABSORPTION COEFFICIENTS, COEFFICIENTS, OPTICAL PROPERTIES, RATES, VELOCITY, LASER BEAMS, SYMPOSIA
Field(s)/Group(s):
Electrooptical and Optoelectronic Devices, Optics
Keyword(s):
Component Reports, Index of refraction
Report Date:
1992 May 22