Low-Power High-Gain Optoelectronic Switch Based on Quantum Stark Effect and Its Use in Logic Operations,

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Abstract:

A low optical power switching device is demonstrated by using quantum Stark effect in a specially designed base collector region of a heterojunction bipolar transistor.

Author(s):
Goswami, S. ; Li, W. ; Bhattacharya, P. ; Singh, J.
Author Organization(s):
MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE
Supplementary Note:
This article is from 'OSA Proceedings of the International Topical Meeting on Photonic Switching Held in Salt Lake City, Utah on 6-8 March 1992. Volume 8,' AD-A253 026, p268 thru p271.
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Subject Terms
Joint Capability Areas:
JCA_6.1.3_Switching and Routing; JCA_6.1_Information Transport; JCA_6_Net Centric
Communities of Interest:
Advanced Electronics
Descriptor(s):
*LOGIC CIRCUITS, *OPTICAL SWITCHING, *LOGIC CIRCUITS, BIPOLAR TRANSISTORS, HETEROJUNCTIONS, POWER, REGIONS, STARK EFFECT, QUANTUM ELECTRONICS
Field(s)/Group(s):
Electrooptical and Optoelectronic Devices
Keyword(s):
Component Reports, QCSE(Quantum Confined Stark Effect)
Report Date:
1992 May 22