Photonic Switching Device by Integration of Heterojunction Phototransistor and Laser Diode,

reportActive / Technical Report | Accession Number: ADP007423 | Need Help?

Abstract:

High gain and very sensitive photonic switching device is developed by integrating directly and vertically a hetero-junction phototransistor and a laser diode. The device switches on with a very low input power of -10nW and emits output power of -4mW under continuous wave condition. The minimum switching energy is estimated to be as low as 8OfJ.

Author(s):
Noda, Susumu ; Takayama, Toru ; Shibata, Kimitaka ; Sasaki, Akio
Author Organization(s):
KYOTO UNIV (JAPAN)
Supplementary Note:
This article is from 'OSA Proceedings of the International Topical Meeting on Photonic Switching Held in Salt Lake City, Utah on 6-8 March 1992. Volume 8,' AD-A253 026, p264 thru p267.
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*PHOTONICS, *PHOTOTRANSISTORS, *OPTICAL SWITCHING, CONTINUOUS WAVES, DIODES, ENERGY, HIGH GAIN, INPUT, OUTPUT, POWER, JAPAN, HETEROJUNCTIONS, LASER APPLICATIONS, ELECTRONIC SWITCHES
Field(s)/Group(s):
Electrooptical and Optoelectronic Devices
Keyword(s):
Component Reports
Report Date:
1992 May 22