An X-Band GaAs FET Oscillator Using a Dielectric Resonator,

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Abstract:

An X-band GaAs FET oscillator highly stabilized by a dielectric resonator was developed. The oscillators frequency stability is less than or - 1MHz -40 deg C 85 deg C, and its size has been greatly miniaturized 20.3mm x 12.6mm x 8.8mm. For the dielectric resonator, a new material BaNiTa03-BaZrZnTa03 has been developed which has an extremely high Q value and high temperature stability. The characteristics of the resonator are K29, Q10,000 at 10 GHz and tau r0 ppmC.

Author(s):
Wakino, K. ; Nishikawa, T. ; Tamura, S. ; Tamura, H.
Author Organization(s):
MURATA MFG CO LTD KYOTO (JAPAN)
Supplementary Note:
This article is from the Proceedings of the Annual Symposium on Frequency Control (37th), 1-3 Jun 83, Marriott Hotel, Philadelphia, Pennsylvania, AD-A136 673, p481-484.
Pagination:
0004

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*GALLIUM ARSENIDES, *FIELD EFFECT TRANSISTORS, *RESONATORS, DIELECTRICS, FREQUENCY, STABILITY, Q FACTOR, MINIATURIZATION, X BAND
Field(s)/Group(s):
,
Keyword(s):
Component Reports
Report Date:
1982 Jan 01